Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator

Solid-State Electronics

Volumn 45, Issue 9, 2001, Pages 1645-1652

  Karmalkar, Shreepad ^a   Mishra, Umesh K ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; ELECTRIC INSULATORS; ELECTRIC RESISTANCE; FREQUENCY RESPONSE; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS;

STEPPED INSULATORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035448118     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00158-7     Document Type: Article

References (10)