An asymmetric two-side program with one-side read (ATPOR) device for multibit per cell MLC nitride-trapping flash memories

IEEE Transactions on Electron Devices

Volumn 52, Issue 12, 2005, Pages 2648-2653

  Wu, Jau Yi ^a   Lee, Ming Hsiu ^a   Hsu, Tzu Hsuan ^a   Kuo, Ming Chang ^a   Lung, Hsiang Lan ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

2 bit cell; 3 bit cell; Multilevel cell (MLC); Nitride trapping device; Second bit effect

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC CURRENT MEASUREMENT; THRESHOLD VOLTAGE; VOLTAGE MEASUREMENT;

ASYMMETRIC TWO-SIDE PROGRAM WITH ONE-SIDE READ (ATPOR) DEVICE; MULTILEVEL CELL (MLC); NITRIDE-TRAPPING DEVICE; SECOND-BIT EFFECT;

FLASH MEMORY;

EID: 29244437579     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.859665     Document Type: Article

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