Investigation of maximum current sensing window for two-side operation, four-bit/cell MLC nitride-trapping nonvolatile flash memories

IEEE Electron Device Letters

Volumn 25, Issue 12, 2004, Pages 795-797

  Hsu, Tzu Hsuan ^a   Lee, Ming Hsiu ^a   Wu, Jau Yi ^a   Lung, Hsiang Lan ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

Four bit cell; Multilevel cells (MLCs); Nitride trapping device; NROM; Second bit effect; Two bit cell

Indexed keywords

MATHEMATICAL MODELS; MOSFET DEVICES; NONVOLATILE STORAGE; ROM; SILICON NITRIDE;

FOUR BIT CELL; MULTILEVEL CELLS (MLCS); NITRIDE TRAPPING DEVICE; NONVOLATILE FLASH MEMORY; NROM; SECOND BIT EFFECT; TWO BIT CELL;

FLASH MEMORY;

EID: 10644240078     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.838055     Document Type: Article

References (8)

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