Annealing effect on Cu/, Ni/4H-SiC Schottky barrier

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue SUPPL., 2005, Pages 277-280

  Yang, Weifeng ^a   Yang, Keqin ^a   Chen, Xiaping ^a   Zhang, Feng ^a   Wang, Liangjun ^a   Wu, Zhengyun ^a  

^a XIAMEN UNIVERSITY   (China)

Author keywords

4H SiC; Annealing; Schottky barrier height

Indexed keywords

ANNEALING; COPPER; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MEASUREMENTS; NICKEL; SILICON CARBIDE; TEMPERATURE;

BAND GAP WIDTH; FERMI PINNING; I-V CHARACTERISTICS; SCHOTTKY BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 29144535639     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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