High-voltage Ti/6H-SiC Schottky barrier diodes

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 22, Issue 8, 2001, Pages 962-966

  Wang, Shu Rui ^a   Liu, Zhong Li ^a   Li, Guo Hua ^a   Yu, Fang ^a   Liu, Huan Zhang ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

6H SiC; Schottky barrier diode; Silicon carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; LEAKAGE CURRENTS; SILICON CARBIDE; TITANIUM;

EPITAXIAL LAYER; THERMAL EVAPORATION;

SCHOTTKY BARRIER DIODES;

EID: 0035436236     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

1. Homoepitaxial growth of SiC on Si-face(0001) 6H-SiC and device characteristics