Electrical properties and interface reaction of annealed Cu/4H-SiC schottky rectifiers

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 925-928

  Hatayama, Tomoaki ^a   Kawahito, Kazuaki ^a   Kijima, Hiroshi ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Annealing; Barrier height; Copper; Schottky; Silicide; XPS

Indexed keywords

ANNEALING; COPPER; CURRENT VOLTAGE CHARACTERISTICS; SCHOTTKY BARRIER DIODES; SILICIDES; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS);

ANNEALED SCHOTTKY; BARRIER HEIGHTS; COPPER SILICIDE; FORWARD CURRENTS; IDEALITY FACTORS; INTERFACE REACTIONS; SCHOTTKY; SCHOTTKY RECTIFIERS;

ELECTRIC RECTIFIERS; SILICON CARBIDE;

EID: 0036435433     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.925     Document Type: Conference Paper

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