Photoreflectance spectroscopy of a Ga0.62In0.38N 0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 μm

Solid State Communications

Volumn 137, Issue 3, 2006, Pages 138-141

  Kudrawiec, R ^a   Gladysiewicz, M ^a   Misiewicz, J ^a   Yuen, H B ^b   Bank, S R ^b   Wistey, M A ^b   Bae, H P ^b   Harris, James S ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b Stanford University   (United States)

Author keywords

A. Quantum wells; A. Semiconductors; D. Photoreflectance

Indexed keywords

OPTICAL PROPERTIES; PHASE TRANSITIONS; REFLECTION; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS;

OPTICAL TRANSITIONS; PHOTOREFLECTANCE;

GALLIUM COMPOUNDS;

EID: 29144524981     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2005.11.006     Document Type: Article

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