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Volumn 17, Issue 8, 2002, Pages 1881-1883
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Nitrogen diffusion in the Si growth on GaN by low-pressure chemical vapor deposition
a a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CALCULATIONS;
CARRIER CONCENTRATION;
CARRIER MOBILITY;
CHEMICAL VAPOR DEPOSITION;
COMPOSITION EFFECTS;
DIFFUSION;
FILM GROWTH;
GALLIUM NITRIDE;
NITROGEN;
PRESSURE EFFECTS;
SEMICONDUCTOR DOPING;
SUBSTITUTION REACTIONS;
HALL MOBILITY;
INCORPORATION-LIMITED PROCESS;
NITROGEN DIFFUSION;
SILICON GROWTH;
SEMICONDUCTING SILICON;
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EID: 0036670341
PISSN: 08842914
EISSN: None
Source Type: Journal
DOI: 10.1557/JMR.2002.0277 Document Type: Article |
Times cited : (3)
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References (12)
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