메뉴 건너뛰기




Volumn 17, Issue 8, 2002, Pages 1881-1883

Nitrogen diffusion in the Si growth on GaN by low-pressure chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; DIFFUSION; FILM GROWTH; GALLIUM NITRIDE; NITROGEN; PRESSURE EFFECTS; SEMICONDUCTOR DOPING; SUBSTITUTION REACTIONS;

EID: 0036670341     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2002.0277     Document Type: Article
Times cited : (3)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.