Conductivity conversion of lightly Fe-doped InP induced by thermal annealing: A method for semi-insulating material production

Journal of Applied Physics

Volumn 81, Issue 11, 1997, Pages 7604-7611

  Fornari, R ^a   Zappettini, A ^a   Gombia, E ^a   Mosca, R ^a   Cherkaoui, K ^b   Marrakchi, G ^b  

^a CNR   (Italy)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; HALL EFFECT; INFRARED SPECTROSCOPY; IRON; OHMIC CONTACTS; SEMICONDUCTOR DOPING;

CAPACITANCE VOLTAGE CHARACTERISTICS; CARRIER MOBILITY; PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031165758     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365336     Document Type: Article

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