Effects of annealing on the electrical properties of Fe-doped InP

Journal of Applied Physics

Volumn 86, Issue 2, 1999, Pages 981-984

  Zhao, Y W ^a   Fung, S ^a   Beling, C D ^a   Sun, N F ^b   Sun, T N ^b   Chen, X D ^b   Yang, G Y ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HEBEI SEMICONDUCTOR RESEARCH INSTITUTE   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRIC PROPERTIES; HALL EFFECT; IRON; PHOTOCURRENTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

PHOTOCURRENT SPECTROSCOPY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032620503     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370835     Document Type: Article

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