Effects of heavy boron doping on the valence band offset at the Si 1-xGex/Si interface and Si1-x Gex band gap

Applied Physics Letters

Volumn 87, Issue 25, 2005, Pages 1-3

  Liu, Jing ^a,b   Ozturk, Mehmet C ^a  

^a North Carolina State University   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; BORON DOPING; JUNCTION CONTACT RESISTANCE; VALENCE BAND OFFSET;

BORON; DOPING (ADDITIVES); ELECTRIC RESISTANCE; HETEROJUNCTIONS; SILICON ALLOYS;

TRANSISTORS;

EID: 29144505074     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2149295     Document Type: Article

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