Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer

IEEE Microwave and Wireless Components Letters

Volumn 15, Issue 11, 2005, Pages 757-759

  Kao, H L ^b   Hung, B F ^b   Chin, Albert ^a,b,c   Lai, J M ^b   Lee, C F ^b   McAlister, S P ^a,d   Chi, C C ^e  

^a IEEE

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^e NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Associated gain; Metal oxide semiconductor field effect transistor (MOSFET); Minimum noise figure; Plastic; Radio frequency (RF)

Indexed keywords

ACOUSTIC NOISE; DEGRADATION; ELECTRIC INSULATION; ELECTRONIC EQUIPMENT; FREQUENCIES; PLASTIC PRODUCTS;

ASSOCIATED GAIN; MINIMUM NOISE FIGURE; PLASTIC; RADIO FREQUENCY (RF);

MOSFET DEVICES;

EID: 28744453254     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2005.858999     Document Type: Article

References (21)

1. T. Ohguro, K. Kojima, H. S. Momose, S. Nittu, T. Fukuda, T. Enda, and Y. Toyoshima, "Improvement of high resistivity substrate for future mixed analog-digital application." in Symp. VLSI Tech. Dig., 2002, pp. 158-159.
2. P. Blondy, A. R. Brown, D. Cros. and G. M. Reheiz, "Low loss micromachined elliptic filters for millimeter wave telecommunication systems." in IEEE MTT-S Int. Dig., 1998, pp. 1181-1184.
3. S. Pacheco, C. T.-C. Nguyen, and L. P. B. Katehi, "Micromachanical electrostatic K-band switches." in IEEE MTT-S Int. Dig., 1998 PP. 1569-1572.
4. J. B. Yoon, B. K. Kim, C. H. Han, K. Yoon, and C. K. Kim, "Surface micromachined solenoid on-Si and on-glass inductors for RF applications." IEEE Electron Device Lett., vol. 20, no. 9, pp. 487-489, Sep. 1999.
5. D. S. Yu, K. T. Chan, A. Chin, S. P. McAlister, C. Zhu, M. F. Li. and D.-L. Kwong. "Narrow-band band-pass filters on silicon substrates at 30 GHz" in IEEE MTT-S Int. Dig., 2004, pp. 1467-1470.
6. A. Chin, K. T. Chan, H. C. Huang, C. Chen, V. Liang. J. K. Chen, S. C. Chien. S. W. Sun. D. S. Duh. W. J. Lin. C. Zhu. M.-F. Li, S. P. McAlister, and 15. L. Kwong. "RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation." in Im. Electron Device Meeting (IEDM) Tech. Dig., 2003. pp. 375-378.
7. K. T. Chan, A. Chin, S. P. McAlister, C. Y. Chang, V. Liang, J. K. Chen, S. C. Chien, D. S. Duh, and W. J. Lin, "Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process," in IEEE MTT-S Int. Dig., vol. 2. 2003. pp. 963-966.
8. K. T. Chan, A. Chin, Y. B. Chen, Y.-D. Lin, D. T. S. Duh, and W. J. Lin, "Integrated antennas on Si. proton-implanted Si and Si-on-quartz." in Int. Electron Devices Meeting (IEDM) Tech. Dig., 2001, pp. 903-906.
9. K. T. Chan, A. Chin, C. M. Kwei, D. T. Shien, and W. J. Lin, 'Transmission line noise from standard and proton-implanted Si." in IEEE MTT-S Int. Dig., vol. 2. 2001. pp. 763-766.
10. Y. H. Wu, A. Chin, K. H. Shih, C. C. Wu, S. C. Pai. C. C. Chi, and C. P. Liao, "RF loss and cross talk on extremely high resistivity (10 K-1 mΩ-cm) Si fabricated by ion implantation." in IEEE MTT-S Int. Dig., vol. 1. 2000, pp. 221-224.
11. K. Dekker, K. Dessein, J.-H. Fock, A. Gakis, C. Jonville, O. M. Kuijken, T. M. Michielsen, P. Mijlemans, H. Pohlmann, W. Schnitt, C. E. Timmering. and A. M. H. Tombeur. "Substrate transfer: Enabling technology for RF applications." in IEDM Tech. Dig., 2003. pp. 371-374.
12. T. Takayama, Y. Ohno, Y. Goto, A. Machida, M. Fujita, J. Maruyama, K. Kalo, J. Koyama, and S. Yamazaki, "A CPU on a plastic film substrate." in Proc, Symp. VLSI Technology 2004. pp. 230-231.
13. H. L. Kao, A. Chin, J. M. Lai, C. F. Lee, K. C. Chiang, and S. P. McAlister. "Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout." in Proc. IEEE RFIC Symp., Jun. 2005. pp. 157-160.
14. M. C. King, Z. M. Lai, C. H. Huang, C. F. Lee, M. W. Ma, C. M. Huang, Y. Chang, and A. Chin, "Modeling linger number dependence on RF noise to 10 GHz in 0.13 μm node MOSFETs with 80 nm gute length." in IEEE RF-IC Symp. Dig., 2004. pp. 171-174.
15. M. C. King, M. T. Yang, C. W. Kuo, Y. Chang, and A. Chin, "RF noise scaling trend of MOSFETs from 0.5 μm to 0.13 μm technology nodes." in IEEE MTT-S Int. Dig., 2004. pp. 6-11.
16. C. H. Huang, K. T. Chan, C. Y. Chen, A. Chin, G. W. Huang, C. Tseng, V. Liang. J. K. Chen, and S. C. Chien, "The minimum noise figure and mechanism as scaling RF MOSFFTs from 0.18 to 0.13 μm technology nodes." in Proc. IEEE RFIC Symp., 2003. pp. 373-376.
17. K. Kuhn, R. Basco, D. Becher, M. Hattendorf, P. Packan, I. Post, P. Vandervoorm. and I. Young, "A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signul/RF circuit applications," in Symp. VLSI Tech. Dig. 2004, pp. 224-225.
18. Z. Wang, J. Ackaert, C. Salm, F. G. Kuper, M. Tack, E. D. Backer, P. Coppens. L. D. Schepper, and B. Vlachakis, "Plasma-charging damage of floating MIM capacitors," IEEE Trans. Electron Devices, vol. 51. no. 6, pp. 1017-1024, Jun. 2004.
19. 2 (Hf) dual gates and high-κ, dielectric on IP6M-0.I8 μm-CMOS." in IEDM Tech. Dig. Dec. 2004. pp. 181-184.
20. R. Basco, A. Pruhhu, S. Yngvesson, and K. M. Lau, "Monolithic integration of a 94 GHz AIGaAs/GaAs 2-DEG mixer on quartz, substrate by epitaxial lift-off." IEEE Trans. Electron Devices. vol. 44. no. 1. pp. 11-16. Jan. 1997.
21. l. Pollentier. C. Brys. P. Demeester. P. Van Daele. and L. Martens. "Transplantation of epiluxially lifted-off MESFETs fabricated by a commercial foundry: Operation and reliability." Electron. Lett., vol. 29. pp. 291-293. Feb. 1993.