Scaling effect on electromigration reliability for CU/low-k interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 191-194

  Pyun, J W ^a   Lu, X ^a   Yoon, S ^a   Henis, N ^b   Neuman, K ^b   Pfeifer, K ^b   Ho, P S ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

Barrier; Dual damascene; Early Failure; Electromigration; Low k, (jL) c; Outdiffusion; Reliability; Scaling

Indexed keywords

BARRIERS; DUAL-DAMASCENE; EARLY FAILURE; LOW-K, (JL)C; OUTDIFFUSION; SCALING;

COPPER; DIFFUSION; ELASTIC MODULI; ELECTROMIGRATION; POROUS MATERIALS; RELIABILITY;

ELECTRIC POWER SYSTEM INTERCONNECTION;

EID: 28744445498     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. E. Liniger, L Gignac, C.-K. Hu, and S. Kaldor, "In situ study of void growth kinetics in electroplated Cu lines", J. Appl. Phys. vol. 92, 2002, pp. 1803-1810
2. R. Rosenberg, D. C. Edelstein, C.-K. Hu, and K. P. Rodbell, "Copper metallization for high performance silicon technology" Annu. Rev. Mater. Sci. vol. 30, 2000, pp. 229-262
3. R. Havemann, and J. Hutchby, "High-performance interconnects: An integration overview", Proc. IEEE, vol. 89, 2001, pp. 586-601
4. C.-K. Hu, L. Gignac, E. Liniger, B. Herbst, and D. L. Rath, "Comparison of Cu electromigration lifetime in Cu interconnects coated with various caps", Appl. Phys. Lett. vol. 83, 2003, pp. 869-871
5. C.-K. Hu, L. Gignac, R. Rosenberg, E. Liniger, J. Rubino, and C. Sambucetti, "Reduced electromigration of Cu wires by surface coating", Appl. Phys. Lett. vol. 81, 2002, pp. 1782-1784
6. th Annual, 2004, pp. 222-228
7. Ennis T. Ogawa, Ki-Don Lee, Volker A. Blaschke, and Paul S. Ho, "Electromigration Reliability Issues in Dual-Damascene Cu Interconnects", IEEE Trans. Reliability, vol. 51, 2002, pp. 403-419.
8. M. Gall, C. Capasso, D. Jawarani, R. Hernandez, and H. Kawasaki, "Detection and analysis of early failures in electromigration" Appl. Phys. Lett., vol. 76, 2000, pp. 843-845.
9. J R Lloyd, "Electromigration in integrated circuit conductors", J.Phys. D: Appl. Phys., vol. 32, 1999, pp. R109-R118
10. Ki-Don Lee, Ennis T. Ogawa, Sean Yoon, Xia Lu, and Paul S. Ho, "Elactromigration reliability of dual-damascene Cu/porous methylsilsesquioxane low k interconnects", Appl. Phys. Lett., vol. 82, 2003, pp. 2032-2034.
11. N. L. Michael, Choong-Un Kim, P. Gillespie, and R. Augur, "Mechanism of reliability failure in Cu interconnects with ultralow-k materials", Appl. Phys. Lett., vol. 83, 2003, pp. 1959-1961.