The mechanical stress effects on data retention reliability of NOR flash memory

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 711-714

  Park, Y M ^a   Lee, J S ^a   Kim, M ^a   Choi, M K ^a   Kim, T K ^a   Han, J I ^a   Kwon, D W ^a   Lee, W K ^a   Song, Y H ^a   Suh, K D ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DATA TRANSFER; ELECTRON TRAPS; ELECTRON TUNNELING; GATES (TRANSISTOR); RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; STRESSES; THRESHOLD VOLTAGE;

DATA RETENTION RELIABILITY; FLOATING GATE; GATE SIDEWALL; INTERLAYER DIELECTRIC;

FLASH MEMORY;

EID: 0035716633     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979611     Document Type: Article

References (5)

1. IEDM
2. IEDM
3. IEEE electron device lett.
4. IEEE electron device lett.
5. Proc. IEEE IRPS