Low-loss inductors built on PECVD intrinsic amorphous silicon for RF integrated circuits

Canadian Journal of Electrical and Computer Engineering

Volumn 30, Issue 4, 2005, Pages 179-182

  Chang, Stella ^a   Sivoththaman, Siva ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

PECVD i a Si:H; Planar inductors

Indexed keywords

INDUCTORS ON SILICON; LOSSY SUBSTRATES;

AMORPHOUS FILMS; ELECTRIC CONDUCTIVITY; SILICON; SUBSTRATES;

ELECTRIC INDUCTORS;

EID: 28444496306     PISSN: 08408688     EISSN: None     Source Type: Journal    
DOI: 10.1109/CJECE.2005.1541748     Document Type: Conference Paper

References (13)

1. J.N. Burghartz, D.C. Edelstein, K.A. Jenkins, and Y.H. Kwark, "Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substrates," IEEE Trans. Microwave Theory Tech., vol. 45, Oct. 1997, pp. 1961-1968.
2. K.L. Scott, T. Hirano, H. Yang, H. Singh, R.T. Howe, and A.M. Niknejad, "High performance inductors using capillary based fluidic self-assembly," J. Microelectromech. Syst., vol. 13, Apr. 2004, pp. 300-309.
3. D. Kelly and F. Wright, "Improvements to performance of spiral inductors on insulators," IEEE MTT-S Digest, vol. 1, Jun. 2002, pp. 541-543.
4. M. Soyuer, J.N. Burghartz, K.A. Jenkins, S. Ponnapalli, J.F. Ewen, and W.E. Pence, "Multilevel monolithic inductors in silicon technology," IEEE Electron. Lett., vol. 31, Mar. 1995, pp. 359-360.
5. C.P. Yue and S.S. Wong, "On-chip spiral inductors with patterned ground shields for Si-based RF IC's," IEEE J. Solid-State Circuits, vol. 33, May 1998, pp. 743-752.
6. H.J. De Los Santos, "On the ultimate limits of IC inductors: An RF MEMS perspective," in Proc. IEEE Electron. Comp. Tech. Conf., May 2002, pp. 1027-1031.
7. J.B. Yoon, Y.S. Choi, B.I. Kim, Y. Eo, and E. Yoon, "CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICs," IEEE Electron Device Lett., vol. 23, Oct. 2002, pp. 591-593.
8. C.P. Yue and S.S. Wong, "Physical modelling of spiral inductors on silicon," IEEE Trans. Electron Devices, vol. 47, Mar. 2000, pp. 560-568.
9. S.S. Mohan, M. del Mar Hershenson, S.P. Boyd, and T.H. Lee, "Simple accurate expressions for planar spiral inductances," IEEE J. Solid-State Circuits, vol. 34, Oct. 1999, pp. 1419-1424.
10. C.P. Yue, C. Ryu, J. Lau, T.H. Lee, and S.S. Wong, "A physical model for planar spiral inductors on silicon," in Proc. IEEE Electron Devices Meeting, Dec. 1996, pp. 155-158.
11. A.A. Langford, M.L. Fleet, and B.P. Nelson, "Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon," Phys. Rev. B, vol. 45, June 1992, pp. 13367-13377.
12. C.L. Garrido Alzar, "Mechanical stress reduction in PECVD a-Si:H thin films," Mat. Sci. Eng. B, vol. 65, Nov. 1999, pp. 123-126.
13. C.Y. Su et al., "A macro model of silicon spiral inductor," Solid-Slate Electron., vol. 46, May 2002, pp. 759-767.