Flicker noise characteristics of MOSFETs with HfO 2, HfAlO x and Al 2O 3/HfO 2 gate dielectrics

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5844, Issue , 2005, Pages 208-217

  Devireddy, Siva Prasad ^a   Min, Bigang ^a   Çelik Butler, Zeynep ^a   Wang, Fang ^b   Zlotnicka, Ania ^b   Tseng, Hsing Huang ^b   Tobin, Philip J ^b  

^a UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Aluminum oxide; Hafnium oxide; High k dielectric; Low frequency noise; MOSFET

Indexed keywords

ALUMINUM OXIDES; FLICKER NOISE; HAFNIUM OXIDE; INTERFACIAL LAYER (IFO); LOW-FREQUENCY NOISE;

ALUMINUM COMPOUNDS; CARRIER MOBILITY; DIELECTRIC MATERIALS; ELECTRON TRAPS; MOSFET DEVICES; THRESHOLD VOLTAGE;

SPURIOUS SIGNAL NOISE;

EID: 28444495907     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.609500     Document Type: Conference Paper

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