메뉴 건너뛰기




Volumn 88, Issue 4, 2001, Pages 411-421

Low-frequency noise measurements on submicrometre n-channel and p-channel MOSFETs at various operating regions

Author keywords

[No Author keywords available]

Indexed keywords


EID: 18044400087     PISSN: 00207217     EISSN: None     Source Type: Journal    
DOI: 10.1080/00207210110035314     Document Type: Article
Times cited : (1)

References (14)
  • 3
    • 29744450559 scopus 로고    scopus 로고
    • Analysis and reduction of signal readout circuitry temporal noise in CMOS images sensors for low-light levels
    • DEǦERLI, Y., LAVERNHE, F., MAGNAN, P., and FARRÉ, J., 2000, Analysis and reduction of signal readout circuitry temporal noise in CMOS images sensors for low-light levels. IEEE Transactions on Electron Devices, 47, 949-962.
    • (2000) IEEE Transactions on Electron Devices , vol.47 , pp. 949-962
    • Deǧerli, Y.1    Lavernhe, F.2    Magnan, P.3    Farré, J.4
  • 4
    • 0031249402 scopus 로고    scopus 로고
    • CMOS image sensors: Electronic camera on-a-chip
    • FOSSUM, E. R., 1997, CMOS image sensors: Electronic camera on-a-chip. IEEE Transactions on Electron Devices, 44, 1689-1698.
    • (1997) IEEE Transactions on Electron Devices , vol.44 , pp. 1689-1698
    • Fossum, E.R.1
  • 5
    • 49349139058 scopus 로고
    • 1/f noise
    • HOOGE, F. N., 1976, 1/f noise. Physica B, 83, 14-23.
    • (1976) Physica B , vol.83 , pp. 14-23
    • Hooge, F.N.1
  • 8
    • 0002868708 scopus 로고
    • 1/f noise and germanium surface properties
    • R. H. Kingston (Ed.), (Philadelphia: University of Pennsylvania Press)
    • McWHORTER, A. L., 1957, 1/f noise and germanium surface properties. In R. H. Kingston (Ed.), Semiconductor Surface Physics (Philadelphia: University of Pennsylvania Press), pp. 207-228.
    • (1957) Semiconductor Surface Physics , pp. 207-228
    • McWhorter, A.L.1
  • 10
    • 0032678739 scopus 로고    scopus 로고
    • On the flicker noise in submicron silicon MOSFET's
    • SIMOEN, E., and CLAEYS, C., 1999, On the flicker noise in submicron silicon MOSFET's. Solid-State Electronics, 43, 865-882.
    • (1999) Solid-State Electronics , vol.43 , pp. 865-882
    • Simoen, E.1    Claeys, C.2
  • 12
    • 0028549082 scopus 로고
    • The impact of device scaling on the current fluctuations in MOSFETs
    • TSAI, M. H., and MA, T. P., 1994, The impact of device scaling on the current fluctuations in MOSFETs. IEEE Transactions on Electron Devices, 41, 2061-2068.
    • (1994) IEEE Transactions on Electron Devices , vol.41 , pp. 2061-2068
    • Tsai, M.H.1    Ma, T.P.2
  • 13
    • 0030378204 scopus 로고    scopus 로고
    • Technology and device scaling considerations for CMOS imagers
    • WONG, H.-S., 1996, Technology and device scaling considerations for CMOS imagers. IEEE Transactions on Electron Devices, 43, 2131-2142.
    • (1996) IEEE Transactions on Electron Devices , vol.43 , pp. 2131-2142
    • Wong, H.-S.1
  • 14
    • 33747659344 scopus 로고    scopus 로고
    • Optimization of noise and responsivity in CMOS active pixel sensors for detection of ultra low light levels
    • YADID-PECHT, O., MANSOORIAN, B., FOSSUM, E. R., and PAIN, B., 1997, Optimization of noise and responsivity in CMOS active pixel sensors for detection of ultra low light levels. Proceedings of SPIE, 3019, 125-136.
    • (1997) Proceedings of SPIE , vol.3019 , pp. 125-136
    • Yadid-Pecht, O.1    Mansoorian, B.2    Fossum, E.R.3    Pain, B.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.