-
1
-
-
0004728806
-
Design and characterization of CMOS APS imagers on two different technologies
-
CAVADORE, C., SOLHUSVIK, J., MAGNAN, P., GAUTRAND, A., DEǦERLI, Y., LAVERNHE, F., FARRÉ, J., SAINT-PE, O., DAVANCENS, R., and TULET, M., 1998, Design and characterization of CMOS APS imagers on two different technologies. Proceedings of SPIE, 3301, 140-150.
-
(1998)
Proceedings of SPIE
, vol.3301
, pp. 140-150
-
-
Cavadore, C.1
Solhusvik, J.2
Magnan, P.3
Gautrand, A.4
Deǧerli, Y.5
Lavernhe, F.6
Farré, J.7
Saint-Pe, O.8
Davancens, R.9
Tulet, M.10
-
3
-
-
29744450559
-
Analysis and reduction of signal readout circuitry temporal noise in CMOS images sensors for low-light levels
-
DEǦERLI, Y., LAVERNHE, F., MAGNAN, P., and FARRÉ, J., 2000, Analysis and reduction of signal readout circuitry temporal noise in CMOS images sensors for low-light levels. IEEE Transactions on Electron Devices, 47, 949-962.
-
(2000)
IEEE Transactions on Electron Devices
, vol.47
, pp. 949-962
-
-
Deǧerli, Y.1
Lavernhe, F.2
Magnan, P.3
Farré, J.4
-
4
-
-
0031249402
-
CMOS image sensors: Electronic camera on-a-chip
-
FOSSUM, E. R., 1997, CMOS image sensors: Electronic camera on-a-chip. IEEE Transactions on Electron Devices, 44, 1689-1698.
-
(1997)
IEEE Transactions on Electron Devices
, vol.44
, pp. 1689-1698
-
-
Fossum, E.R.1
-
5
-
-
49349139058
-
1/f noise
-
HOOGE, F. N., 1976, 1/f noise. Physica B, 83, 14-23.
-
(1976)
Physica B
, vol.83
, pp. 14-23
-
-
Hooge, F.N.1
-
7
-
-
0025383482
-
Random telegraph noise in deep submicrometer MOSFETs
-
HUNG, K. K., KO, P. K., HU, C., and CHENG, Y. C., 1990, Random telegraph noise in deep submicrometer MOSFETs. IEEE Electron Device Letters, 11, 90-92.
-
(1990)
IEEE Electron Device Letters
, vol.11
, pp. 90-92
-
-
Hung, K.K.1
Ko, P.K.2
Hu, C.3
Cheng, Y.C.4
-
8
-
-
0002868708
-
1/f noise and germanium surface properties
-
R. H. Kingston (Ed.), (Philadelphia: University of Pennsylvania Press)
-
McWHORTER, A. L., 1957, 1/f noise and germanium surface properties. In R. H. Kingston (Ed.), Semiconductor Surface Physics (Philadelphia: University of Pennsylvania Press), pp. 207-228.
-
(1957)
Semiconductor Surface Physics
, pp. 207-228
-
-
McWhorter, A.L.1
-
9
-
-
0028463791
-
Random telegraph signals in deep submicrometer n-MOSFETs
-
SHI, Z., MIEVILLE, J-P., and DUTOIT, M., 1994, Random telegraph signals in deep submicrometer n-MOSFETs. IEEE Transactions on Electron Devices, 41, 1161-1168.
-
(1994)
IEEE Transactions on Electron Devices
, vol.41
, pp. 1161-1168
-
-
Shi, Z.1
Mieville, J.-P.2
Dutoit, M.3
-
10
-
-
0032678739
-
On the flicker noise in submicron silicon MOSFET's
-
SIMOEN, E., and CLAEYS, C., 1999, On the flicker noise in submicron silicon MOSFET's. Solid-State Electronics, 43, 865-882.
-
(1999)
Solid-State Electronics
, vol.43
, pp. 865-882
-
-
Simoen, E.1
Claeys, C.2
-
11
-
-
0026821932
-
Explaining the amplitude of RTS noise in submicrometer MOSFETs
-
SIMOEN, E., DIERICKX, B., CLAEYS, C. L. and DECLERCK G. J., 1992, Explaining the amplitude of RTS noise in submicrometer MOSFETs. IEEE Transactions on Electron Devices, 39, 422-428.
-
(1992)
IEEE Transactions on Electron Devices
, vol.39
, pp. 422-428
-
-
Simoen, E.1
Dierickx, B.2
Claeys, C.L.3
Declerck, G.J.4
-
12
-
-
0028549082
-
The impact of device scaling on the current fluctuations in MOSFETs
-
TSAI, M. H., and MA, T. P., 1994, The impact of device scaling on the current fluctuations in MOSFETs. IEEE Transactions on Electron Devices, 41, 2061-2068.
-
(1994)
IEEE Transactions on Electron Devices
, vol.41
, pp. 2061-2068
-
-
Tsai, M.H.1
Ma, T.P.2
-
13
-
-
0030378204
-
Technology and device scaling considerations for CMOS imagers
-
WONG, H.-S., 1996, Technology and device scaling considerations for CMOS imagers. IEEE Transactions on Electron Devices, 43, 2131-2142.
-
(1996)
IEEE Transactions on Electron Devices
, vol.43
, pp. 2131-2142
-
-
Wong, H.-S.1
-
14
-
-
33747659344
-
Optimization of noise and responsivity in CMOS active pixel sensors for detection of ultra low light levels
-
YADID-PECHT, O., MANSOORIAN, B., FOSSUM, E. R., and PAIN, B., 1997, Optimization of noise and responsivity in CMOS active pixel sensors for detection of ultra low light levels. Proceedings of SPIE, 3019, 125-136.
-
(1997)
Proceedings of SPIE
, vol.3019
, pp. 125-136
-
-
Yadid-Pecht, O.1
Mansoorian, B.2
Fossum, E.R.3
Pain, B.4
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