Rectification and intrinsic photocurrent of GaAs/Si photodiodes formed with pulsed-laser deposition at 1064 nm

Applied Physics Letters

Volumn 87, Issue 15, 2005, Pages 1-3

  Ullrich, B ^a   Erlacher, A ^a  

^a BOWLING GREEN STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOCURRENT SPECTRA; SI PHOTODIODES;

PHOTOCURRENTS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SENSITIVITY ANALYSIS;

PHOTODIODES;

EID: 28344453676     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2093942     Document Type: Article

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