Optoelectronic multiplexer realization by a GaAs/Si hetero-structure formed by pulsed-laser deposition

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5359, Issue , 2004, Pages 23-30

  Ullrich, Bruno ^a   Erlacher, Artur ^a   Gerasimov, Timofey G ^a   Komarova, Elena Y ^b   Jaeger, Herbert ^c  

^a BOWLING GREEN STATE UNIVERSITY   (United States)

^b Fractal Systems Inc   (United States)

^c MIAMI UNIVERSITY   (United States)

Author keywords

GaAs Si multiplexer; Photocurrent; pn junction; Pulsed laser deposition; Thin film GaAs on Si

Indexed keywords

GAAS/SI MULTIPLEXER; PN JUNCTION; SPECTRAL SENSITIVITY; THIN FILM GAAS ON SI;

ATOMIC FORCE MICROSCOPY; ELECTRIC CONTACTS; HETEROJUNCTIONS; MULTIPLEXING EQUIPMENT; PHOTOCURRENTS; PHOTODETECTORS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; THICKNESS MEASUREMENT; THIN FILMS;

OPTOELECTRONIC DEVICES;

EID: 4344629681     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.528544     Document Type: Conference Paper

References (5)

1. 2,"Appl. Phys. Lett. 75, pp. 3826-3828, 1999.
2. K. W. Eisenbeiser and J. Ramdani, "Structure and method for fabricating semiconductor structures and devices not lattice matched to the substrate," US Patent 20020030246, 2002.
3. J. Carlin, S. A. Ringel, E. A Fitzgerald, and M. Bulsara, "High Quality GaAs Growth by MBE on Si Using GeSe Buffers and Prospects for Space Voltaics," Prog. Photovolt: Res. Appl. 8, pp. 323-332, 2000.
4. B. Ullrich, A. Erlacher, S. Yano, R. Schroeder, T. G. Gerasimov, and H. J. Haugan, "Preparation of thin-film GaAs on glass by pulsed-laser deposition," in Proceedings of SPIE Vol. 4977 Photon Processing in Microelectronics and Photonics II, edited by Alberto Pique, Koji Sugioka, Peter R. Herman, Jim Fieret, Friedrich G. Bachmann, Jan J. Dubowski, Willem Hoving, Kunihiko Washio, David B. Geohegan, Frank Traeger, and Kouichi Murakami, (SPIE, Bellingham, WA, 2003) 180-187.
5. D. L. Smith, Thin-Film Deposition, Principles & Practice, p. 394, MacGraw-Hill, Inc., New York, 1995.