The formation of GaAs/Si photodiodes by pulsed-laser deposition

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5339, Issue , 2004, Pages 365-373

  Ullrich, Bruno ^a   Erlacher, Artur ^a   Jaeger, Herbert ^b  

^a BOWLING GREEN STATE UNIVERSITY   (United States)

^b MIAMI UNIVERSITY   (United States)

Author keywords

Doping with pulsed laser deposition; Photodiode; Pulsed laser deposition; Thin film GaAs on Si; X ray

Indexed keywords

CRYSTAL LATTICES; EPITAXIAL GROWTH; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THERMAL EXPANSION; THIN FILM CIRCUITS; X RAY ANALYSIS;

EXPLOSIVE CONGRUENT EVAPORATION; MOTOROLA (CO); THERMAL SHOCK; THIN-FILM GAAS ON SI;

PHOTODIODES;

EID: 5444226468     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.528546     Document Type: Conference Paper

References (13)

1. M. S. Unlu, G. Munns, J. Chen, T. Won, H. Unlu, H. Morkoc, G. Radhakrishnan, J. Katz, and D. Verret, "Characteristics of annealed p/n junctions between GaAs and Si (100)," Appl. Phys. Lett. 51, pp. 1995-1997, 1987.
2. A. Georgakilas, P. Panayotatos, J. Stoemenos, J.-L. Mourrain, and A. Christou, "Achievements and limitations in optimized GaAs films grown on Si by molecular-beam epitaxy," J. Appl. Phys. 71, pp. 2679-2701, 1992.
3. V. Alberts, J. H. Neethling, and A. W. Leitch, "Correlation between structural, optical, and electrical properties of GaAs grown on (001) Si," J. Appl. Phys. 75, pp. 7258-7265, 1994.
4. 2," Appl. Phys. Lett. 75, pp. 3826-3828, 1999.
5. D. S. Burgess, "Motorola grows GaAs on Silicon," Photonics Technology News October 2001.
6. N. Chandrasekaran, T. Soga, and T. Jimbo, "GaAs film on Si substrate transplanted from GaAs/Ge structure by direct bonding," Appl. Phys. Lett. 82, pp. 3892-3894, 2003.
7. D. L. Smith, Thin-Film Deposition, Principles & Practice, p. 394, MacGraw-Hill, Inc., New York, 1995.
8. V. S. Ban and D. A. Kramer, "Thin films of semiconductor and dielectrics produced by laser evaporation," J. Mat. Sci. 5, pp. 978-982, 1970.
9. D. B. Chrisey and G. K. Hubler (Eds.), Pulsed Laser Deposition of Thin Films, p. 260, John Wiley & Sons, New York, 1994.
10. B. Ullrich, A. Erlacher, S. Yano, R. Schroeder, T. G. Gerasimov, and H. J. Haugan, "Preparation of thin-film GaAs on glass by pulsed-laser deposition," in Proceedings of SPIE Vol. 4977 Photon Processing in Microelectronics and Photonics II, edited by Alberto Pique, Koji Sugioka, Peter R. Herman, Jim Fieret, Friedrich G. Bachmann, Jan J. Dubowski, Willem Hoving, Kunihiko Washio, David B. Geohegan, Frank Traeger, and Kouichi Murakami, (SPIE, Bellingham, WA, 2003) 180-187.
11. A. Erlacher and B. Ullrich, "All-optical digitizing of laser transmission through thin-film GaAs on glass," Semicond. Sci. Technol. 19, pp. L9-L12, 2004.
12. B. Ullrich, H. Sakai, and Y. Segawa, "Optoelectronic properties of thin-film CdS formed by ultraviolet and infrared pulsed-laser deposition," Thin Solid Films 385, pp. 220-224, 2000.
13. B. Ullrich, N. M. Dushkina, H. Ezumi, S. Keitoku, and T. Kobayashi, "Dependence of the photocurrent on a bias of a p-InP/n-CdS heterojunction formed by laser ablation," Solid State Commun. 103, 635-637, 1997.