S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method

Applied Physics Letters

Volumn 81, Issue 20, 2002, Pages 3798-3800

  Yoo, Young Zo ^a   Jin, Zheng Wu ^a   Chikyow, T ^a   Fukumura, T ^b   Kawasaki, M ^b   Koinuma, H ^c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c Tokyo Institute of Technology ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; FILM GROWTH; LATTICE CONSTANTS; LIGHT ABSORPTION; MAGNETORESISTANCE; PULSED LASER DEPOSITION; SULFUR; ZINC SULFIDE;

VEGARD'S LAW;

ZINC OXIDE;

EID: 0037065132     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1521577     Document Type: Article

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