Influence of annealing and surfactant on InGaAsN/GaAs multiple quantum well

Journal of Crystal Growth

Volumn 267, Issue 3-4, 2004, Pages 412-416

  Kim, T S ^a   Park, J Y ^a   Cuong, T V ^a   Kim, H G ^a   Lee, H J ^a   Suh, E K ^a   Hong, C H ^a  

^a Chonbuk National University   (South Korea)

Author keywords

A1. High resolution X ray diffraction; A1. Intermixing; A1. Photocurrent; A1. Surfactant; A3. Metalorganic chemical vapor deposition; B1. InGaAsN

Indexed keywords

ANNEALING; DIFFUSION; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; SURFACE ACTIVE AGENTS; X RAY DIFFRACTION;

COMPRESSIVE STRAIN; HIGH RESOLUTION X-RAY DIFFRACTION; INGAASN; INTERMIXING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 2942571231     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.016     Document Type: Article

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