Growth of heavy ion-induced nanodots at the SiO2-Si interface: Correlation with ultrathin gate oxide reliability

Journal of Non-Crystalline Solids

Volumn 351, Issue 52-54, 2005, Pages 3834-3838

  Touboul, A D ^a   Carlotti, J F ^a   Marinoni, M ^a   Caussanel, M ^c   Ramonda, M ^b   Guasch, C ^b   Bruguier, G ^a   Bonnet, J ^b   Saigne F ^a   Gasiot, J ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b UNIV MONTPELLIER   (France)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; FILMS; RADIATION; RELIABILITY; SILICON; SILICON COMPOUNDS; SUBSTRATES;

GOLD ION IRRADIATION; RADIATION-HARSH ENVIRONMENT; SILICON OXIDE FILM; STRUCTURAL DEGRADATION;

GROWTH (MATERIALS);

EID: 28244494743     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.10.017     Document Type: Article

References (34)

1. C.T.R. Wilson Proc. R. Soc. London, Series-A 87 1912 277
2. O. Hahn, F. Strassmann, and S. Fluegge Naturwissenschaften 27 11 1939 544
3. F. Joliot CR Acad. Sci. II 208 1939 647
4. D.R. Corson, and R.L. Thornton Phys. Rev. 55 5 1939 509
5. K.J. Brostrom, J.K. Boggild, and T. Lauritsen Phys. Rev. 58 1940 651
6. D.A. Young Nature 182 1958 375
7. R.L. Fleischer, and P.B. Price J. Appl. Phys. 34 9 1963 2903
8. R.L. Fleischer, and P.B. Price Science 140 1963 1221
9. P.B. Price, and R.M. Walker J. Appl. Phys. 33 1962 3407
10. P.B. Price, and R.M. Walker J. Appl. Phys. 33 1962 2625
11. J.S. Suehle, E.M. Vogel, and P. Roitman Appl. Phys. Lett. 80 2002 1282
12. J.F. Ziegler, J.P. Biersack, U. Littmark, Pergamon, New York, 1985.
13. J.A. Brinkman J. Appl. Phys. 25 1954 961
14. R.L. Fleischer MRS Bull. 20 1995 17
15. R.L. Fleischer, P.B. Price, R.M. Walker, University of California, Berkeley, 1975.
16. M.I. Kaganov, I.M. Lifshitz, and L.V. Tanatarov Sov. Phys. JETP-USSR 4 2 1957 173
17. G.J. Dienes Ann. Rev. Nucl. Sci. 2 1953 187
18. M. Toulemonde, C. Trautmann, and E. Balanzat Nucl. Instrum. Methods B 216 2004 1
19. G. Bonfiglioli, A. Ferro, and A. Mojoni J. Appl. Phys. 32 1961 2499
20. E. Dartyge, J.P. Duraud, and Y. Langevin Phys. Rev. B 23 1981 5213
21. K. Izui, S. Furuno, in: Proc. XIth Int. Cong. on Electron Microscopy Kyoto (1986) p. 1299.
22. P.S. Chaudhari, T.M. Bhave, and D. Kanjilal J. Appl. Phys. 93 2003 3486
23. A. Cester, A. Paccagnella, and J. Suñé Appl. Phys. Lett. 79 2001 1336
24. M. Porti, M. Nafria, X. Aymerich, et al., in: Proc. of RADECS Int. Conf. (2004) p. 17.
25. F.W. Sexton, D.M. Fleetwood, and M.R. Shanneyfelt IEEE Trans. Nucl. Sci. 44 1997 2345
26. A.H. Johnston, G.M. Swift, and T. Miyahira IEEE Trans. Nucl. Sci. 45 1998 2500
27. J.F. Conley Jr., J.S. Suehle, and A.H. Johnston IEEE Trans. Nucl. Sci. 48 2001 1913
28. M. Ceschia, A. Paccagnella, and S. Sandrin IEEE Trans. Nucl. Sci. 47 2000 566
29. J. Suñé, E. Miranda, and M. Nafria Appl. Phys. Lett. 75 1999 959
30. M. Toulemonde, J.M. Costantini, and C. Dufour Nucl. Instrum. Methods B 216 2004 1
31. K. Awazu, S. Ishii, and K. Shima Phys. Rev. B 62 6 2000 3689
32. M. Toulemonde, E. Balanzat, and S. Bouffard Nucl. Instrum. Methods B 46 1990 64
33. K. Merkle Phys. Rev. Lett. 9 4 1962 150
34. A. Meftah, N. Merrien, and N. Nguyen Nucl. Instrum. Methods B 59&60 1991 605