Low-temperature atomic assembly of stoichiometric gallium arsenide from equiatomic vapor

Journal of Crystal Growth

Volumn 286, Issue 1, 2006, Pages 197-204

  Murdick, D A ^a   Zhou, X W ^a   Wadley, H N G ^a  

^a University of Virginia   (United States)

Author keywords

A1. Molecular dynamics simulation; A1. Stillinger Weber potential; A3. Molecular beam epitaxy; A3. Vapor deposition epitaxy; B1. Gallium arsenide

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL GROWTH; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; POTENTIAL ENERGY; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY; VAPOR DEPOSITION;

LOW-TEMPERATURE ATOMIC ASSEMBLY; MOLECULAR DYNAMICS SIMULATION; STILLINGER-WEBER POTENTIAL; VAPOR DEPOSITION EPITAXY;

THIN FILMS;

EID: 28244451854     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.006     Document Type: Article

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