Barrier layer effects on electromigration reliability of Cu/Low k interconnects

Proceedings of the IEEE 2005 International Interconnect Technology Conference, IITC

Volumn , Issue , 2005, Pages 33-35

  Lu, X ^a   Pyun, J W ^a   Li, B ^a   Henis, N ^b   Neuman, K ^b   Pfeifer, K ^b   Ho, P S ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER THICKNESS; DENSITY PRODUCT; LIFETIME DEGRADATION;

COPPER; ELECTROMIGRATION; FAILURE ANALYSIS; POTASSIUM; RELIABILITY; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

LARGE SCALE SYSTEMS;

EID: 28244440262     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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