A self-aligned cap technology for Cu damascene interconnects by MO-CVD ZrN film

Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Volumn , Issue , 2002, Pages 292-294

  Kondo, H ^a   Nakao, Y ^a   Suzuki, T ^a   Sakai, H ^a   Shimizu, N ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER; DIELECTRIC MATERIALS; FILMS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; ORGANIC CHEMICALS; ORGANOMETALLICS;

ANNEALING PROCESS; CU DAMASCENE INTERCONNECTS; CU-INTERCONNECTS; DIELECTRIC LAYER; FUNDAMENTAL PROPERTIES; INSULATING FILM; METAL CAPPING; TIME-DEPENDENT DIELECTRIC BREAKDOWN LIFETIMES;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84961692304     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2002.1014960     Document Type: Conference Paper

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