Single crystal silicon MEMS fabrication based on smart-cut technique

Sensors and Actuators, A: Physical

Volumn 112, Issue 1, 2004, Pages 116-121

  Du, Jiangang ^a   Ko, Wen H ^a   Young, Darrin J ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

Ion implant; MEMS fabrication; Single crystal silicon MEMS; Smart cut

Indexed keywords

CANTILEVER BEAMS; COSTS; EPITAXIAL GROWTH; ION IMPLANTATION; SEMICONDUCTING SILICON; SILICON WAFERS; SINGLE CRYSTALS;

MEMS FABRICATION; MICRO-BRIDGES; SINGLE CRYSTAL SILICON MEMS; SMART-CUT;

MICROELECTROMECHANICAL DEVICES;

EID: 2142711606     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2003.11.027     Document Type: Article

References (11)

1. Petersen K. Silicon as a mechanical material. Proc. IEEE. 70(5):1982;420-457.
2. T. Brosnihan, J.M. Bustillo, A.P. Pisano, R.T. Howe, Embedded interconnect and electrical isolation for high-aspect-ratio, SOI inertial instruments, in: Proceedings of the 1997 International Conference on Solid-State Sensor and Actuators, June 1997, pp. 637-640.
3. R.A. Conant, J.T. Nee, K.Y. Lau, R.S. Muller, A flat high-frequency scanning micromirror, in: Proceedings of Solid-State Sensor and Actuator Workshop, June 2000, pp. 6-9.
4. V. Milanovic, M. Last, K.S.J. Pister, Monolithic silicon micromirrors with large scanning angle, in: Proceedings of Optical MEMS 2001, Okinawa, Japan, September 2001, pp. 135-136.
5. Milanovic V., Doherty L., Teasdale D., Parsa S., Zhang C., Pister K.J.S. Micromachining technology for lateral field emission devices. IEEE Transaction on Electron Devices - special issue on vacuum electronics. 48(1):2001;166-173.
6. L. Parameswaran, C. Hsu, M.A. Schmidt, A merged MEMS-CMOS process using silicon wafer bonding, IEDM, 1995, pp. 613-616.
7. Auberton-Herve A.J., Bruel M., Aspar B., Maleville C., Moriceau H. Smart-cut: the basic fabrication process for UNIBOND SOI wafers. IEICE Trans. Electron. E80-C:1997;358-363.
8. Tong Q.-Y., Gutijahr K., Hopfe S., Lee T.-H. Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates. Appl. Phys. Lett. 70:1997;1390-1392.
9. Yun C.-H., Cheung N.W. Fabrication of silicon and oxide membranes over cavities using ion-cut layer transfer. IEEE J. Microelectromech. Syst. 9(4):2000;474-477.
10. Pae S., Su T., Denton J.P., Neudeck G.W. Multiple layers of silicon-on-insulator islands fabrication by selective epitaxial growth. IEEE Electron. Device Lett. 20(5):1999;194-196.
11. Aspar B., Bruel M., Moriceau H., Maleville C., Poumeyrol T., Papon A.M. Basic mechanisms involved in the smart-cut process. Microelectron. Eng. 36:1997;233-240.