A new design for submicron double-barrier resonant tunnelling transistors

Semiconductor Science and Technology

Volumn 11, Issue 3, 1996, Pages 388-391

  Austing, D G ^a   Honda, T ^a   Tarucha, S ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; ELECTRON TUNNELING; ELECTRONS; LIGHT MODULATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR PLASMAS;

DOUBLE BARRIER RESONANT TUNNELLING TRANSISTORS; DOUBLE BARRIER STRUCTURE; DRAIN CURRENT; DRAIN VOLTAGE; GATE VOLTAGE; SCHOTTKY GATE; WET ETCHING;

TRANSISTORS;

EID: 0030107726     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/3/018     Document Type: Article

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