Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 499-503

  Coffin, H ^a   Bonafos, C ^a   Schamm, S ^a   Carrada, M ^a,d   Cherkashin, N ^a,e   Ben Assayag, G ^a   Dimitrakis, P ^c   Normand, P ^c   Respaud, M ^b   Claverie, A ^a  

^a CEMES CNRS   (France)

^b INSA   (France)

^c INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^d LPST   (France)

^e IOFFE INSTITUTE   (Russian Federation)

Author keywords

Metal oxide semiconductor; Non volatile; Si nanocrystals

Indexed keywords

ANNEALING; ELECTRIC POTENTIAL; ION IMPLANTATION; MOS DEVICES; OXIDATION; SEMICONDUCTING SILICON; SURFACE CHEMISTRY;

DEVICE ARCHITECTURE; NON-VOLATILE MEMORY; SI NANOCRYSTALS; SURFACE DENSITY;

NANOSTRUCTURED MATERIALS;

EID: 27844612405     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.129     Document Type: Conference Paper

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