Optoelectronic and structural characteristics of Er-doped amorphous AlN films

Journal of Applied Physics

Volumn 98, Issue 9, 2005, Pages

  Zanatta, A R ^a   Ribeiro, C T M ^a   Jahn, U ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALN FILMS; OPTICAL EXCITATION; RADIO-FREQUENCY SPUTTERING;

LUMINESCENCE; NITROGEN; OPTOELECTRONIC DEVICES; RAMAN SCATTERING;

AMORPHOUS MATERIALS;

EID: 27844612057     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2127120     Document Type: Article

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