Spectroscopic study of Nd-doped amorphous SiN films

Journal of Applied Physics

Volumn 96, Issue 2, 2004, Pages 1068-1073

  Ribeiro, C T M ^a   Li, M Siu ^a   Zanatta, A R ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BINDING ENERGY; ELECTRON ENERGY LEVELS; NEODYMIUM; PHOTOLUMINESCENCE; RAMAN SCATTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

COSPUTTERING; PHOTONICS; RARE EARTH (RE) IONS; VACUUM CHAMBERS;

SILICON NITRIDE;

EID: 3242657481     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1760843     Document Type: Article

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