Boron lattice location in room temperature ion implanted Si crystal

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 249-252

  Piro, A M ^a   Romano, L ^a   Mirabella, S ^a   Grimaldi, M G ^a  

^a UNIVERSITY OF CATANIA   (Italy)

Author keywords

Boron lattice; Ion implanted Si crystal; Si self interstitial (I Si) supersaturation

Indexed keywords

BORON; COMPUTER SIMULATION; CRYSTALS; ION IMPLANTATION; LATTICE CONSTANTS; MONTE CARLO METHODS; PROTONS; REACTIVITY (NUCLEAR); SUPERSATURATION;

BORON LATTICE; DOPED LAYERS; ION IMPLANTED SI CRYSTAL; SI-SELF-INTERSTITIAL (ISI) SUPERSATURATION;

SILICON;

EID: 27844588378     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.061     Document Type: Conference Paper

References (24)

1. International Technology Roadmap for Semiconductors, Semiconductor Industry Association, Austin, TX, 2001.
2. S.C. Jain, W. Schoenmaker, R. Lindsay, P.A. Stolk, S. Decoutere, M. Willander, and H.E. Maes J. Appl. Phys. 91 2002 8919
3. N.E.B. Cowern, K.T.F. Janssen, and H.F.F. Jos J. Appl. Phys. 68 1990 6191
4. L. Shao, J. Liu, Q.Y. Chen, and W.K. Chu Mater. Sci. Eng., R. 42 2003 65
5. N.E.B. Cowern, K.T.F. Janssen, G.F.A. van de Walle, and D.J. Gravesteijn Phys. Rev. Lett. 65 1990 2434
6. N.E.B. Cowern, G.F.A. van de Walle, D.J. Gravesteijn, and C.J. Vriezema Phys. Rev. Lett. 67 1991 212
7. B. Sadigh, T.J. Lenosky, S.K. Theiss, M.-J. Caturla, T.D. de la Rubia, and M.A. Foad Phys. Rev. Lett. 83 1999 4341
8. W. Windl, M.M. Bunea, R. Stumpf, S.T. Dunham, and M.P. Masqualier Phys. Rev. Lett. 83 1999 4345
9. J. Zhu, T.D. de la Rubia, L.H. Yang, C. Mailhiot, and G.H. Gilmer Phys. Rev. B 54 1996 4741
10. P. Alippi, L. Colombo, P. Ruggerone, A. Sieck, G. Seifert, and T. Frauenheim Phys. Rev. B 64 2001 75207
11. L. Pelaz, G.H. Gilmer, H.-J. Gossmann, C.S. Rafferty, M. Jaraiz, and J. Barbolla Appl. Phys. Lett. 74 1999 3657
12. X.-Y. Liu, W. Windl, and M.P. Masquelier Appl. Phys. Lett. 77 2000 018
13. P. Alippi, P. Ruggerone, and L. Colombo Phys. Rev. B 69 2004 125205
14. L.C. Feldman, J.W. Mayer, and S.T. Picraux Materials Analysis by Ion Channelling 1982 Academic Press New York
15. M.L. Swanson Rep. Prog. Phys. 45 1982 47
16. P.J.M. Smulders, and D.O. Boerma Nucl. Instrum. Methods Phys. Res. B 29 1987 471
17. P.J.M. Smulders, D.O. Boerma, B. Bench Nielsen, and M.L. Swanson Nucl. Instrum. Methods Phys. Res. B 45 1990 438
18. A.M. Piro, L. Romano, S. Mirabella, and M.G. Grimaldi Appl. Phys. Lett. 86 2005 81906
19. L.J. Van der Pauw A method of measuring specific resistivity and hall effect of discs of arbitrary shape Philips Res. Repts. 13 1958 1
20. 56 Standard test method for measuring resistivity and hall coefficient and determining hall mobility in single-crystal semiconductors, F 76-86, Annual Book of ASTM Standards, Section ten: Electrical Insulation and Electronics, vol. 10.05, Electronics II, USA, 2001.
21. J.W. Mayer, and E. Rimini Ion Beam Handbook for Material Analysis 1977 Academic Press New York
22. M. Vollmer, J.D. Meyer, R.W. Michelmann, and K. Bethge Nucl. Instrum. Methods Phys. Res. B 117 1996 21
23. J. Liu, X. Lu, X. Wang, and W.-K. Chu Nucl. Instrum. Methods Phys. Res. B 190 2002 107
24. J.F. Ziegler, J.F. Bierasck, and U. Littmark The Stopping and the Range of Ions in Solids 1985 Pergamon New York