Characterizing implant behavior during flash RTP by means of backside diagnostics

10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002

Volumn , Issue , 2002, Pages 99-105

  Ross, J ^a   McCoy, S ^a   Elliott, K ^a   Gelpey, J ^a   Downey, D F ^b   Arevalo, E A ^b  

^a Vortek Industries Ltd   (Canada)

^b VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

flash assist; rapid thermal anneal; ultra shallow junction

Indexed keywords

ANNEALING; ATMOSPHERIC TEMPERATURE; HEAT TREATMENT; RAPID THERMAL ANNEALING;

ANNEALING TECHNIQUES; FLASH-ASSIST; INTERMEDIATE TEMPERATURES; SPIKE ANNEALING; THERMAL PHYSICS; TIME-TEMPERATURE PROFILE; ULTRA SHALLOW JUNCTION; WAFER SURFACE;

SILICON WAFERS;

EID: 84962446627     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2002.1039446     Document Type: Conference Paper

References (10)

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2. A.T. Fiory, K.K. Bourdelle, M.E. Lefrançois, D.M. Camm, A. Agarwal. Electrical Measurements of Annealed Boron Implants for Shallow Junctions, ECS Proc vol. 99-10 (1999), p 133
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4. th Int. Conf. on Adv. Thermal Processing of Semiconductors, RTF 2000, Gaithersburg, Sept 2000
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6. T. Gebel, M. Voelskow, W. Skorupa, G. Mannino, V. Privitera, F. Priolo, E. Napolitani, A. Carnera. Flash Lamp Annealing with Millisecond Pulses for Ultra-Shallow Boron Profiles in Silicon, Annual Report IIM 2001, FZR-338
7. S. Earles, J. Frazer, M. Law, K. Jones, S. Talmar, D. Downey, E. Arevalo. Formation of ultrashallow junctions in 500eV Boron implanted using nonmelt laser annealing, Electron Device Letters, to be published
8. International Technology Roadmap for Semiconductors - Front End Processes, Semiconductor Industry Association, p 20, 2001
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10. th International Conference on Advanced Thermal Processing of Semiconductors-RTP 2001 (2001) 87.