In situ analysis of lattice relaxation by reflection high-energy electron diffraction

Journal of Physics D: Applied Physics

Volumn 38, Issue 23, 2005, Pages 4222-4226

  Wei, X H ^a   Li, Y R ^a   Zhu, J ^a   Zhang, Y ^a   Liang, Z ^a   Huang, W ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; INTERFACES (MATERIALS); LATTICE CONSTANTS; REFLECTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

DIFFRACTION THEORY; FILM THICKNESS; LATTICE RELAXATION;

RELAXATION PROCESSES;

EID: 27844482075     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/38/23/013     Document Type: Article

References (16)

1. Dobson P J, Joyce B A, Neave J H and Zhang J 1986 J. Cryst. Growth 81 1
2. Lippmaa M, Nakagawa N, Kawasaki M, Ohashi S and Koinuma H 2000 Appl. Phys. Lett. 76 2439
3. Lee J Y, Juang J Y, Wu K H, Uen T M and Gou Y S 2001 Surf. Sci. 488 277
4. Dabrowska-Szata M 2003 Mater. Chem. Phys. 81 257
5. Peng L S J, Moeckly B H, Xi X X and Alpay S P 2003 Appl. Phys. Lett. 83 4592
6. Karpenko O P, Yalisove S M and Eaglesham D J 1997 J. Appl. Phys. 82 1157
7. Guo L W, Hanada T, Ko H J, Chen Y F, Makino H and Yao T 2000 Surf. Sci. 445 151
8. Andrieu S and Frechard P 1996 Surf. Sci. 360 289
9. Litvinov D, O'Donnell T and Clarke R 1999 J. Appl. Phys. 85 2151
10. Brewer R T, Atwater H A, Groves J R and Arendt P N 2003 J. Appl. Phys. 93 205
11. Li Y R, Li J L, Zhang Y, Wei X H, Deng X W and Liu X Z 2004 J. Appl. Phys. 96 1640
12. Matolin V and Peuchot B 1995 Thin Solid Films 259 65
13. Koida T, Lippmaa M, Komiyama D, Kawasaki M and Koinuma H 2002 Appl. Surf. Sci. 185 226
14. Turban P, Hennet L and Andrieu S 2000 Surf. Sci. 446 241
15. Stampe P A and Kennedy R J 1998 J. Cryst. Growth 191 478
16. Langjahr P A, Wagner T, Lange F T and Ruhle M 2003 J. Cryst. Growth 256 162