Subwavelength periodic ripple formation on GaN surface by femtosecond laser pulses

Surface Review and Letters

Volumn 12, Issue 4, 2005, Pages 651-657

  Wang, X C ^a   Lim, G C ^a   Ng, F L ^a   Liu, W ^b   Chua, S J ^b  

^a SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Femtosecond pulsed laser; GaN; Laser fluence; Ripple formation; Subwavelength period

Indexed keywords

GALLIUM NITRIDE; LASER PULSES; PHOTOEMISSION; PHOTOLUMINESCENCE;

FEMTOSECOND LASER PULSES; GAN; LASER FLUENCE; RIPPLE FORMATION; SUBWAVELENGTH PERIOD;

SURFACE STRUCTURE;

EID: 27744513208     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0218625X05007530     Document Type: Article

References (22)

1. S. Nakamura, M. Senoh, S. Nagahara, N. Iwasa, T. Yamada, T. Matsuahita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys. 35 (1996) L74.
2. S. Nakamura, M. Senoh, S. Nagahara, N. Iwasa, T. Yamada, T. Matsuahita, Y. Sugimoto and H. Kiyoku, Jpn. J. Appl. Phys. 36 (1997) L1056.
3. S. Nakamura, M. Senoh, S. Nagahara, N. Iwasa, T. Yamada, T. Matsuahita, H. Kiyoku, Y. Sugimoto, T. Kozald, H. Umemeoto, M. Sano and K. Chocho, Appl. Phys. Lett. 72 (1998) 2014.
4. Y. Arakawa and A. Yariv, IEEE J. Quantum Electron. 22 (1986) 1887.
5. D. Leonard, K. Pond and P. M. Petroff, Phys. Rev. B50 (1994) 11687.
6. J. Bonse, S. Baudach, J. Kruger, W. Kautek and M. Lenzner, Appl. Phys. A74 (2002) 19.
7. J. Bonse, J. M. Wrobel, J. Kruger and W. Kautek, Appl. Phys. A72 (2001) 89.
8. A. Borowiec, M. Couillard, G. A. Button and H. K. Hangen, Appl. Phys. A 79 (2004) 1887.
9. F. Costache, S. Kouteva-Arguirova and J. Reif, Appl. Phys. A79 (2004) 1429.
10. J. Bonse, H. Sturm, D. Schmidt and W. Kautek, Appl. Phys. A71 (2000) 657.
11. G. Dumitru, V. Romano, H. P. Weber, M. Sentis and W. Marine, Appl. Surf. Sci. 205 (2003) 85.
12. M. Birnbaum, J. Appl. Phys. 36 (1965) 3688.
13. A. M. Ozkan, A. P. Malshe, T. A. Railkar, W. D. Brown, M. D. Shirk and P. A. Molian, Appl. Phys. Lett. 75 (1999) 3716.
14. A. Borowiec and H. K. Haugen, Appl. Phys. Lett. 82 (2003) 4462.
15. Q. Wu, Y. Ma, R. Fang, Y. Liao, Q. Yu, X. Chen and K. Wang, Appl. Phys. Lett. 82 (2003) 1703.
16. N. Yasumaru, K. Miyazaki and J. Kiuchi, Appl. Phys. A79 (2004) 425.
17. X. C. Wang, G. C. Lim, F. L. Ng, W. Liu and S. J. Chua, Appl. Surf. Sci. (2005), in press.
18. K. Ozono, M. Obara, A. Usui and H. Sunakawa, Opt. Commun. 189 (2001) 103.
19. X. C. Wang, G. C. Lim, H. Y. Zheng, F. L. Ng, W. Liu and S. J. Chua, Appl. Surf. Sci. 228 (2004) 221.
20. N. R. Issenor, Appl. Phys. Lett. 31 (1977) 148.
21. J. C. Miller and R. F. Haglund Jr., Laser Ablation and Desorption (Academic, San Diego, CA, 1998), p. 341.
22. M. E. Levinshtein, S. L. Rumyantsev and M. S. Shur, Properties of Advanced Semiconductor Matenah, GaN, AlN, InN, BN, SiC, SiGe (John Wiley & Sons, 2001), p. 3.