Magnetization switching and tunneling magnetoresistance effects of MTJs with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB

IEEE Transactions on Magnetics

Volumn 41, Issue 10, 2005, Pages 2685-2687

  Rhee, J R ^a   Hwang, J Y ^a   Kim, S S ^a   Kim, M Y ^a   Chun, B S ^b   Yoo, I S ^b   Oh, B S ^b   Kim, Y K ^a,d   Kim, T W ^c   Park, W J ^c  

^a Sookmyung Women's University   (South Korea)

^b Korea University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d IEEE

Author keywords

Amorphous ferromagnet; CoFeSiB; Magnetic random access memory (MRAM); Switching field; Synthetic antiferromagnet (SAF); Tunneling magnetoresistance (TMR)

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; COBALT ALLOYS; COERCIVE FORCE; COMPUTER SIMULATION; MAGNETIZATION; MAGNETORESISTANCE;

AMORPHOUS FERROMAGNET; COFESIB; MAGNETIC RAM (MRAM); SWITCHING FIELDS; SYNTHETIC ANTIFERROMAGNET (SAF); TUNNELING MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 27744498823     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2005.855296     Document Type: Article

References (10)

1. W. J. Gallagher, S. S. P. Parkin, Y. Lu, X. P. Bian, A. Marley, K. P. Roche, R. A. Altman, S. A. Rishton, C. Jahnes, T. M. Shaw, and G. Xiao, "Microstructured magnetic tunnel junctions," J. Appl. Phys., vol. 81, pp. 3741-3746, 1997.
2. T. Nozaki, Y. Jiang, H. Sukegawa, N. Tezuka, A. Hirohata, K. Inomata, and S. Sugimoto, "Magnetic switching properties of magnetic tunnel junctions using a synthetic ferrimagnet free layer," J. Appl. Phys., vol. 95, pp. 3745-3748, 2004.
3. E. C. Stoner and E. P. Wohlfarth, "A mechanism of magnetic hysteresis in heterogeneous alloys," Philos. Trans. Roy. Soc., ser., vol. A240, pp. 559-642, 1948.
4. A. Käufler, Y. Luo, K. Samwer, G. Gieres, M. Vieth, and J. Wecker, "Tunnel-magnetoresistance system with an amorphous detection layer," J. Appl. Phys., vol. 91, pp. 1701-1703, 2002.
5. H. Kano, K. Bessho, Y. Higo, K. Ohba, M. Hashimoto, T. Mizuguchi, and M. Hosomi, "MRAM with improved magnetic tunnel junction material," in Dig. Intermag Eur. 2002, Amsterdam, The Netherlands, 2002, Paper BB04.
6. M. S. Song, B. S. Chun, Y. K. Kim, I. J. Hwang, and T. W. Kim, "Suppression of bias voltage dependence in double-barrier magnetic tunnel junctions comprised of freelayers with an amorphous layer insertion," J. Appl. Phys., to be published.
7. F. E. Luborsky, Amorphous Metallic Alloys. London, U.K.: Butterworths, 1983.
8. D. Wang, C. Nordman, J. Daughton, Z. Qian, and J. Fink, "70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and pinned layers," in Dig. 9th Joint MMM/Intermag Conf., Anaheim, CA, 2004, Paper BD02.
9. H. A. M. van den Berg, W. Clemens, G. Gieres, G. Rupp, M. Vieth, J. Wecker, and S. Zoll, "GMR angle detector with an artificial antiferromagnetic subsystem (AAF)," J. Magn. Magn. Mater., vol. 165, pp. 524-528, 1997.
10. N. Wiese, T. Dimopoulos, M. Rührig, J. Wecker, H. Brückl, and G. Reiss, "Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers," Appl. Phys. Lett., vol. 85, pp. 2020-2022, 2004.