Tunnel-magnetoresistance system with an amorphous detection layer

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1701-1703

  Kaufler A ^a   Luo, Y ^a   Samwer, K ^a   Gieres, G ^b   Vieth, M ^b   Wecker, J ^b  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; AMORPHOUS PHASE; ANNEALING TEMPERATURES; IN-PLANE ANISOTROPY; MAGNETIC TUNNEL JUNCTION; PREPARATION TECHNIQUE; ROOM TEMPERATURE; SHORT RANGE ORDERS; SOFT MAGNETIC LAYERS; SWITCHING FIELD; THIN LAYERS;

ELECTRIC RESISTANCE;

MAGNETORESISTANCE;

EID: 84861433827     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1426236     Document Type: Article

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