Magnetic switching properties of magnetic tunnel junctions using a synthetic ferrimagnet free layer

Journal of Applied Physics

Volumn 95, Issue 7, 2004, Pages 3745-3748

  Nozaki, T ^a   Jiang, Y ^a,b   Sukegawa, H ^a   Tezuka, N ^a,b   Hirohata, A ^a,b   Inomata, K ^a,b   Sugimoto, S ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ASPECT RATIO; ELECTRON BEAM LITHOGRAPHY; FERRIMAGNETIC MATERIALS; MAGNETIC MATERIALS; MAGNETORESISTANCE; OXIDATION; SPUTTERING; SYNTHESIS (CHEMICAL); ULTRAHIGH VACUUM;

ION MILLING; MAGNETIC SWITCHING; MAGNETIC TUNNEL JUNCTIONS (MTJ); SYNTHETIC FERRIMAGNET (SYF); TUNNELING MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 1942510592     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1669053     Document Type: Article

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