Suppression of bias voltage dependence in double-barrier magnetic tunnel junctions comprised of freelayers with an amorphous layer insertion

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Song, Min Sung ^a   Chun, Byong Sun ^a   Kim, Young Keun ^a   Hwang, Injun ^b   Kim, Taewan ^b  

^a Korea University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE-BARRIER MAGNETIC TUNNEL JUNCTIONS (DMTJ); INTERFACIAL ROUGHNESS; TUNNEL BARRIERS; VIBRATING SAMPLE MAGNETOMETERS (VSM);

AMORPHOUS MATERIALS; ATOMIC FORCE MICROSCOPY; ATTENUATION; COERCIVE FORCE; ELECTRIC POTENTIAL; MAGNETIZATION; MAGNETOMETERS; SURFACE ROUGHNESS;

TUNNEL JUNCTIONS;

EID: 21044455191     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1853839     Document Type: Conference Paper

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