Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier

IEEE Transactions on Magnetics

Volumn 41, Issue 10, 2005, Pages 2944-2946

  Song, Jin Oh ^a   Lee, Seong Rae ^a   Shin, Hyun Joon ^b  

^a Korea University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Magnetic tunnel junction (MTJ); Resistance; Thermal and electrical stability; Ti alloyed Al oxide barrier

Indexed keywords

ALUMINA; ANNEALING; CONCENTRATION (PROCESS); ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; INSULATING MATERIALS; MAGNETORESISTANCE; MICROSTRUCTURE; THERMODYNAMIC STABILITY; TITANIUM ALLOYS; TUNNEL JUNCTIONS;

MAGNETIC TUNNEL JUNCTIONS (MTJ); RESISTANCE; THERMAL AND ELECTRICAL STABILITY; TI-ALLOYED AL-OXIDE BARRIERS;

MAGNETIC DEVICES;

EID: 27744466648     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2005.855322     Document Type: Article

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