Magnetic tunnel junctions with a tunnel barrier formed by N2O plasma

Applied Physics Letters

Volumn 83, Issue 22, 2003, Pages 4583-4585

  Shim, Heejae ^a   Park, J M ^a   Kim, K P ^a   Cho, B K ^a   Kim, Jin Tae ^b   Park, Y ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; BINDING ENERGY; COBALT COMPOUNDS; ELECTRODES; FERROMAGNETIC MATERIALS; MAGNETIC MATERIALS; MAGNETORESISTANCE; NICKEL COMPOUNDS; NITROGEN OXIDES; OXIDATION; PHOTOELECTRON SPECTROSCOPY; PLASMAS;

MAGNETIC TUNNEL JUNCTIONS; PLASMA OXIDATION; TUNNEL BARRIER; TUNNELING MAGNETORESISTANCE;

TUNNEL JUNCTIONS;

EID: 0346216001     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1631383     Document Type: Article

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