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Volumn 81, Issue 12, 2002, Pages 2214-2216
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Reduced temperature and bias-voltage dependence of the magnetoresistance in magnetic tunnel junctions with Hf-inserted Al2O3 barrier
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Author keywords
[No Author keywords available]
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Indexed keywords
MAGNETIC TUNNEL JUNCTION;
TUNNEL BARRIER;
ALUMINUM;
BIAS VOLTAGE;
ELECTRIC RESISTANCE;
HAFNIUM;
TUNNEL JUNCTIONS;
MAGNETIC DEVICES;
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EID: 79956049151
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1508413 Document Type: Article |
Times cited : (10)
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References (11)
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