SCOPUS 정보 검색 플랫폼

Annual Proceedings-Reliability Physics (Symposium)

Volumn , Issue , 2001, Pages 150-155

Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents

(8) Lenahan, P M a Melc, J J a Campbell, J P a Kang, A Y a Lowry, R K b Woodbury, D b Liu, S T c Weimer, R d

a PENNSYLVANIA STATE UNIVERSITY (United States)

b INTERSIL CORPORATION (United States)

c HONEYWELL TECHNOLOGY CENTER (United States)

d MICRON TECHNOLOGY INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; HOLE TRAPS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MATHEMATICAL MODELS; PARAMAGNETIC RESONANCE; PHOTONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SILICA; THIN FILMS;

DANGLING BOND DEFECTS; METAL-OXIDE-SILICON INTEGRATED CIRCUITS; OXIDE LEAKAGE CURRENTS; STRESS INDUCED LEAKAGE CURRENTS;

CMOS INTEGRATED CIRCUITS;

EID: 0034987425 PISSN: 00999512 EISSN: None Source Type: Journal
DOI: 10.1109/RELPHY.2001.922894 Document Type: Article

Times cited : (6)

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