Sputter depth profiling of multiple short-period BN δ-doped Si by work function measurement

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 8, 2005, Pages 6289-6291

  Mizuhara, Yuzuru ^a   Bungo, Takuya ^a   Nagatomi, Takaharu ^a   Takai, Yoshizo ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

doped layer; Dopant analysis; Secondary electron method; Semiconductor device; Sputter depth profiling; Work function measurement

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BORON; OPTICAL RESOLVING POWER; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SPUTTERING;

Δ-DOPED LAYER; DOPANT ANALYSIS; SECONDARY ELECTRON METHOD; WORK FUNCTION (WF);

SILICON;

EID: 27644587553     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.6289     Document Type: Article

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