Auger voltage contrast imaging for the delineation of two-dimensional junctions in cross-sectioned metal-oxide-semiconductor devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 1, 1998, Pages 420-425

  Werner, W S M ^a   Lakatha, H ^a   Smith, H E ^b   LeTarte, L ^b   Ambrose, V ^b   Baker, J ^c  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b HEWLETT PACKARD COMPANY   (United States)

^c Physical Electronics Inc Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CALCULATIONS; COMPUTER SIMULATION; CRYSTAL STRUCTURE; ELECTRON ENERGY LEVELS; FERMI LEVEL; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

AUGER VOLTAGE CONTRAST IMAGING; FERMI-DIRAC STATISTICS; SECONDARY ION MASS SPECTROSCOPY;

AUGER ELECTRON SPECTROSCOPY;

EID: 0031655129     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589824     Document Type: Article

References (8)

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