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Volumn 42, Issue 6 B, 2003, Pages

Analysis of dopant concentration in semiconductor using secondary electron method

Author keywords

Dopant concentration; Secondary electron spectrum; Semiconductor device; Sputter depth profiling; Work function measurement

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRIC DISTORTION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; SEMICONDUCTING SILICON;

SECONDARY ELECTRON SPECTRUM;

SEMICONDUCTOR DEVICES;

EID: 0041363323 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.l709 Document Type: Article

Times cited : (14)

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