Non-destructive quantitative analysis of the Ge concentration in SiGe quantum wells by means of low energy RBS

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 240, Issue 3, 2005, Pages 733-740

  Draxler, M ^a,b   Muhlberger M ^a   Schaffler F ^a   Bauer, P ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); NONDESTRUCTIVE EXAMINATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SILICON COMPOUNDS; SURFACE CHEMISTRY;

GE CONCENTRATION; SIMULATED SPECTRA; TILT ANGLE;

GERMANIUM;

EID: 27644520984     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.133     Document Type: Article

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