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Physical Review Letters

Volumn 87, Issue 2, 2001, Pages

Screening breakdown on the route toward the metal-insulator transition in modulation doped Si/SiGe quantum wells

(5) Wilamowski, Z a,b Sandersfeld, N a Jantsch, W a Tobben D c Schaffler F a

a JOHANNES KEPLER UNIVERSITY LINZ (Austria)

b INSTITUTE OF PHYSICS (Poland)

c WALTER SCHOTTKY INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; MAGNETIC SUSCEPTIBILITY; METAL INSULATOR TRANSITION; MOLECULAR BEAM EPITAXY; PARAMAGNETIC RESONANCE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SPECTROMETERS;

SCREENING WAVE VECTOR; THOMAS FERMI APPROXIMATION; TWO DIMENSIONAL ELECTRON;

SEMICONDUCTOR QUANTUM WELLS;

EID: 42749102740 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (56)

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