SCOPUS 정보 검색 플랫폼

Volumn 36, Issue 6 SUPPL. B, 1997, Pages 4134-4138

Charging effect of inas dots in split-gate high electron mobility transistor structure

a NONE

Author keywords

Charging effect; Effective mass; Self assembled InAs dot; Split gate structure

Indexed keywords

EID: 0001151543 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.4134 Document Type: Article

Times cited : (21)

References (13)

1
- 0028499029
- N. Kirstaedter, N. N. Ledentsov, M. Grundmann, D. Bimberg, V. M. Ustinov, S. S. Ruvimov, M. V. Maximov, P. S. Kop'ev, Zh. I. Alferov, U. Richter, P. Werner, U. Gosele and J. Heydenreich: Electron. Lett. 30 (1994) 1416.
- (1994) Electron. Lett. , vol.30 , pp. 1416
- Kirstaedter, N.¹ Ledentsov, N.N.² Grundmann, M.³ Bimberg, D.⁴ Ustinov, V.M.⁵ Ruvimov, S.S.⁶ Maximov, M.V.⁷ Kop'ev, P.S.⁸ Alferov, Zh.I.⁹ Richter, U.¹⁰ Werner, P.¹¹ Gosele, U.¹² Heydenreich, J.¹³

2
- 0029489707
- Temmyo, E. Kuramochi, M. Sugo, T. Nishiya, R. Nötzel, T. Tamamura: Mater. Sci. Eng. B35 (1995) 7.
- (1995) Mater. Sci. Eng. , vol.B35 , pp. 7
- Temmyo¹ Kuramochi, E.² Sugo, M.³ Nishiya, T.⁴ Nötzel, R.⁵ Tamamura, T.⁶

3
- 0029490093
- IEEE, San Francisco
- N. Horiguchi, T. Futatsugi, Y. Nakata and N. Yokoyama: Int. Electron Devices Meet. Tech. Dig. (IEEE, San Francisco 1995) p. 371.
- (1995) Int. Electron Devices Meet. Tech. Dig. , pp. 371
- Horiguchi, N.¹ Futatsugi, T.² Nakata, Y.³ Yokoyama, N.⁴

4
- 3643061092
- San Diego
- G. Yusa and H. Sakaki: Int. Conf. on Molecular Beam Epitaxy (San Diego, 1996).
- (1996) Int. Conf. on Molecular Beam Epitaxy
- Yusa, G.¹ Sakaki, H.²

5
- 36449008205
- K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai and K. Seiki: Appl. Phys. Lett. 67 (1995) 828.
- (1995) Appl. Phys. Lett. , vol.67 , pp. 828
- Yano, K.¹ Ishii, T.² Hashimoto, T.³ Kobayashi, T.⁴ Murai, F.⁵ Seiki, K.⁶

6
- 0029516376
- IEEE, New York
- S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, D. Buchanan: Int. Electron Devices Meet. Tech. Dig. (IEEE, New York, 1995) p. 521.
- (1995) Int. Electron Devices Meet. Tech. Dig. , pp. 521
- Tiwari, S.¹ Rana, F.² Chan, K.³ Hanafi, H.⁴ Chan, W.⁵ Buchanan, D.⁶

7
- 25044447375
- J. M. Moison, F. Houzy, F. Barthe, L. Leprince, E. André and O. Vatel: Appl. Phys. Lett. 64 (1993) 196.
- (1993) Appl. Phys. Lett. , vol.64 , pp. 196
- Moison, J.M.¹ Houzy, F.² Barthe, F.³ Leprince, L.⁴ André, E.⁵ Vatel, O.⁶

8
- 0029236249
- Sapporo
- K. Nishi, R. Mirin, D. Leonard, G. Mederios-Ribeiro, P. M. Petroff and A. C. Gossard: Proc. Int. Conf. Indium Phosphide & Related Materials (Sapporo, 1995) p. 759.
- (1995) Proc. Int. Conf. Indium Phosphide & Related Materials , pp. 759
- Nishi, K.¹ Mirin, R.² Leonard, D.³ Mederios-Ribeiro, G.⁴ Petroff, P.M.⁵ Gossard, A.C.⁶

9
- 3643068406
- Berlin
- K. Yoh and J. Konda: 23rd Int. Conf. on Physics of Semiconductors (Berlin, 1996).
- (1996) 23rd Int. Conf. on Physics of Semiconductors
- Yoh, K.¹ Konda, J.²

10
- 3643120476
- H. Drexsler, D. Leonard, W. Hansen, J. P. Kotthaus and P. M. Petroff: Appl. Phys. Lett. 73 (1994) 2252.
- (1994) Appl. Phys. Lett. , vol.73 , pp. 2252
- Drexsler, H.¹ Leonard, D.² Hansen, W.³ Kotthaus, J.P.⁴ Petroff, P.M.⁵

11
- 3643123628
- St. Petersburg
- A. Lorke, M. Fricke, B. T. Miller, M. Haslinger, J. P. Kotthaus, G. Medeiros-Ribeiro and P. M. Petroff: 23rd Int. Symp. Compound Semiconductors (St. Petersburg, 1996).
- (1996) 23rd Int. Symp. Compound Semiconductors
- Lorke, A.¹ Fricke, M.² Miller, B.T.³ Haslinger, M.⁴ Kotthaus, J.P.⁵ Medeiros-Ribeiro, G.⁶ Petroff, P.M.⁷

12
- 3643099634
- Sapporo
- N. Nishiguchi and K. Yoh: presented in Int. Symp. Fabrication, Physics and Applications of Quantm Dot Structures, Sapporo 1996.
- (1996) Int. Symp. Fabrication, Physics and Applications of Quantm Dot Structures
- Nishiguchi, N.¹ Yoh, K.²

13
- 3643050575
- to be published
- N. Nishiguchi and K. Yoh: to be published in Jpn. J. Appl. Phys.
- Jpn. J. Appl. Phys.
- Nishiguchi, N.¹ Yoh, K.²

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