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Volumn 175-176, Issue PART 2, 1997, Pages 730-735

MBE growth of novel GaAs/n-AlGaAs field-effect transistor structures with embedded InAs quantum traps and their transport characteristics

(2) Yusa, G a Sakaki, H b,c

a INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

b UNIVERSITY OF TOKYO (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS;

ELECTRON TRAPPING;

FIELD EFFECT TRANSISTORS;

EID: 0031144936 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00927-X Document Type: Article

Times cited : (6)

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